Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order ≤0.55
Identifieur interne : 010568 ( Main/Repository ); précédent : 010567; suivant : 010569Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order ≤0.55
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Abstract
Photoluminescence (PL) properties and carrier lifetimes of spontaneously ordered Ga0.52In0.48P/GaAs are measured at low temperatures. Samples with values of degree of order S from 0.22 to 0.55 are used. The full width at half maximum of the PL increases from 9.36 to 30.6 meV with increasing S. The PL peak of the indirect transition is blueshifted with increasing excitation power, whereas the PL peak of the direct transition is not. The energy separation between the PL peaks for the direct and the indirect transitions becomes greater with increasing S. The carrier lifetime increases dramatically with increasing S, from 0.68 ns at S=0.22 to 13800 ns at S=0.55 at the peak energy of the PL spectrum. The ordering dependence of these characteristics is interpreted using a simple physical model of the ordered state. Variations in the ordered state with increasing ordering are discussed. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ordering dependence of carrier lifetimes and ordered states of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs with degree of order ≤0.55</title><author><name sortKey="Sasaki, A" uniqKey="Sasaki A">A. Sasaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics, Osaka Electro-Communications University, Neyagawa 572-8530, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronics, Osaka Electro-Communications University, Neyagawa 572-8530</wicri:regionArea><wicri:noRegion>Neyagawa 572-8530</wicri:noRegion></affiliation></author><author><name sortKey="Tsuchida, K" uniqKey="Tsuchida K">K. Tsuchida</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics, Osaka Electro-Communications University, Neyagawa 572-8530, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronics, Osaka Electro-Communications University, Neyagawa 572-8530</wicri:regionArea><wicri:noRegion>Neyagawa 572-8530</wicri:noRegion></affiliation></author><author><name sortKey="Narukawa, Y" uniqKey="Narukawa Y">Y. Narukawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501, Japan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501</wicri:regionArea><wicri:noRegion>Kyoto 606-8501</wicri:noRegion></affiliation></author><author><name sortKey="Kawakami, Y" uniqKey="Kawakami Y">Y. Kawakami</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501, Japan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501</wicri:regionArea><wicri:noRegion>Kyoto 606-8501</wicri:noRegion></affiliation></author><author><name sortKey="Fujita, Sg" uniqKey="Fujita S">Sg. Fujita</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501, Japan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501</wicri:regionArea><wicri:noRegion>Kyoto 606-8501</wicri:noRegion></affiliation></author><author><name sortKey="Hsu, Y" uniqKey="Hsu Y">Y. Hsu</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science & Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science & Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0018951</idno><date when="2001-01-01">2001-01-01</date><idno type="stanalyst">PASCAL 01-0018951 AIP</idno><idno type="RBID">Pascal:01-0018951</idno><idno type="wicri:Area/Main/Corpus">011F72</idno><idno type="wicri:Area/Main/Repository">010568</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier lifetime</term><term>Energy gap</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Long-range order</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Spectral shift</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7866F</term><term>7361E</term><term>6855J</term><term>7120N</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Indium composé</term><term>Durée vie porteur charge</term><term>Photoluminescence</term><term>Déplacement spectral</term><term>Bande interdite</term><term>Couche épitaxique semiconductrice</term><term>Ordre longue distance</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Photoluminescence (PL) properties and carrier lifetimes of spontaneously ordered Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs are measured at low temperatures. Samples with values of degree of order S from 0.22 to 0.55 are used. The full width at half maximum of the PL increases from 9.36 to 30.6 meV with increasing S. The PL peak of the indirect transition is blueshifted with increasing excitation power, whereas the PL peak of the direct transition is not. The energy separation between the PL peaks for the direct and the indirect transitions becomes greater with increasing S. The carrier lifetime increases dramatically with increasing S, from 0.68 ns at S=0.22 to 13800 ns at S=0.55 at the peak energy of the PL spectrum. The ordering dependence of these characteristics is interpreted using a simple physical model of the ordered state. Variations in the ordered state with increasing ordering are discussed. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>89</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ordering dependence of carrier lifetimes and ordered states of Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs with degree of order ≤0.55</s1></fA08><fA11 i1="01" i2="1"><s1>SASAKI (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>TSUCHIDA (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>NARUKAWA (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>KAWAKAMI (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>FUJITA (Sg.)</s1></fA11><fA11 i1="06" i2="1"><s1>HSU (Y.)</s1></fA11><fA11 i1="07" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA14 i1="01"><s1>Department of Electronics, Osaka Electro-Communications University, Neyagawa 572-8530, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electronic Science & Engineering, Kyoto University, Kyoto 606-8501, Japan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>343-347</s1></fA20><fA21><s1>2001-01-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0018951</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Photoluminescence (PL) properties and carrier lifetimes of spontaneously ordered Ga<sub>0.52</sub>In<sub>0.48</sub>P/GaAs are measured at low temperatures. Samples with values of degree of order S from 0.22 to 0.55 are used. The full width at half maximum of the PL increases from 9.36 to 30.6 meV with increasing S. The PL peak of the indirect transition is blueshifted with increasing excitation power, whereas the PL peak of the direct transition is not. The energy separation between the PL peaks for the direct and the indirect transitions becomes greater with increasing S. The carrier lifetime increases dramatically with increasing S, from 0.68 ns at S=0.22 to 13800 ns at S=0.55 at the peak energy of the PL spectrum. The ordering dependence of these characteristics is interpreted using a simple physical model of the ordered state. Variations in the ordered state with increasing ordering are discussed. © 2001 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70A20N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7120N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Durée vie porteur charge</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Carrier lifetime</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Déplacement spectral</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Spectral shift</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Ordre longue distance</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Long-range order</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fN21><s1>008</s1></fN21><fN47 i1="01" i2="1"><s0>0101M000068</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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